PART |
Description |
Maker |
BLM7G24S-30BG |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
BLM7G1822S-80AB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
CGY93 |
GSM 2 stage Power Amplifier MMIC GaAs MMIC From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
PTGA090304MD |
Wideband LDMOS Two-stage Integrated Power Amplifier 2 X 15 W, 48 V, 575 ?960 MHz
|
Cree, Inc
|
PTMC210204MD |
Wideband LDMOS Two-stage Integrated Power Amplifier 20 W, 28 V, 1805 ?2200 MHz
|
Cree, Inc
|
PTMC210204MD |
Wideband LDMOS Two-stage Integrated Power Amplifi er 20 W, 28 V, 1805 ?2200 MHz
|
Infineon Technologies A...
|
BLF4G20LS-110B |
From old datasheet system UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors NXP Semiconductors N.V.
|
BLF6G21-10G |
Power LDMOS transistor 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
Q68000-A8884 CGY92 |
GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier) From old datasheet system
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
0809LD30 |
Compant High-Insulation Power Relay, Polarized, 10A 30瓦,28V的,1 GHz的LDMOS的场效应 30 Watt / 28V / 1 Ghz LDMOS FET 30 WATT 28V 1 GHz LDMOS FET 30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc. GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
|
LB421-14 |
RF POWER LDMOS TRANSISTOR SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|